妓院一钑片免看黄大片,亚洲av无码成人精品国产,亚洲AV综合色区无码专区桃色,免费A级毛片在线播放不收费

型號2000SM邊緣曝光系統

2000AF型曝光系統

OAI 2000型曝光系統可以配置為邊緣曝光系統（2000SM）或曝光系統（2000AF）;這兩種配置都基于OAI經過驗證的，經過時間測試的平臺。

兩種型號的2000型曝光系統包括UV光源，強度控制電源和機器人襯底處理子系統。 UV光源提供發散半角<2.0％的可調強度光束。電源從200W到2,000W。強度控制器傳感器直接連接到光源，用于精確的強度監控。機器人襯底處理系統是微處理器控制的，并且可以被編程以適應各種各樣的襯底尺寸。陰影掩模能力使得用戶能夠在保持非常接近掩模的同時對襯底的頂部進行圖案化。在25微米的分離時，這些系統能夠具有6微米的分辨率。

在SM配置中，邊緣珠曝光系統提供了***種經濟有效的方法，使用標準陰影掩模技術進行邊緣珠去除。掩模和基材切換可以快速且容易地實現，從而增加了該大批量生產工具的通用性和生產量。

在AF配置中，2000型泛光曝光系統用于增強和/或增強生產和研發環境中的光刻過程。應用包括光刻膠穩定和改性，圖像反轉和PCM工藝。


Model 2000SM Edge-bead Exposure System

Model 2000AF Flood Exposure System

The OAI Model 2000 Exposure Systems may be configured as either an edge-bead exposure system (2000SM) or a flood exposure system (2000AF); both configurations are based on OAI＇s proven, time-tested platform.

Both versions of the Model 2000 Exposure System include a UV light source, intensity controlling power supply ａnd robotic substrate handling subsystem. UV light sources provide adjustable intensity beams with divergence half-angles of <2.0%. Power supplies are available from 200W to 2,000W. Intensity controller sensors are linked directly to the light source for accurate intensity monitoring. The robotic substrate handling system is microprocessor controlled ａnd may be programmed to accommodate a wide variety of substrate sizes. The shadow mask capability enables the user to pattern the top of a substrate while being held in very close proximity to the mask. At a separation of 25-microns, these systems are capable of 6-micron resolution.

In the SM configuration, the Edge-bead Exposure System provides a cost-effective method for edge-bead removal using standard shadow mask technology. Mask ａnd substrate changeover can be accomplished quickly ａnd easily adding to both versatility ａnd throughput of this high-volume production tool.

In the AF configuration, the Model 2000 Flood Exposure System is used to augment, and/or enhance the photolithography processes in both production ａnd R&D environments. Applications include photo resist stabilization ａnd modification, image reversal ａnd PCM processes.